Determination of the chemical composition of distorted InGaN GaN heterostructures from x-ray diffraction data

被引：131
作者：
Schuster, M
Gervais, PO
Jobst, B
Hösler, W
Averbeck, R
Riechert, H
Iberl, A
Stömmer, R
机构：
[1] Siemens AG, Corp Technol, D-81739 Munich, Germany
[2] Ecole Polytech, F-91128 Palaiseau, France
[3] Bruker AXS, D-76187 Karlsruhe, Germany
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1999年 / 32卷 / 10A期
关键词：
D O I：
10.1088/0022-3727/32/10A/312
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An evaluation algorithm for the determination of the chemical composition of strained hexagonal epitaxial films is presented. This algorithm is able to separate the influence of strain and composition on the lattice parameters measured by x-ray diffraction. The measurement of symmetric and asymmetric reflections delivers the strained lattice parameters a and c of hexagonal epitaxial films. These lattice parameters are used to calculate the relaxed lattice parameters employing the theory of elasticity. From the relaxed parameters, the chemical composition of the epitaxial film can be determined by Vegard's rule. The algorithm has been applied to InGaN/GaN/Al2O3(00.1) heterostructures.
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页码：A56 / A60
页数：5
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