INFRARED SPECTROSCOPY OF NANO-POROUS SILICON

被引：0
|
作者：
Prokhorov, A. S. [1 ]
Zhukova, E. S. [1 ]
Spektor, I. E. [1 ]
Karavansky, V. A. [2 ]
Gorshunov, B. P. [1 ]
机构：
[1] Russian Acad Sci, AM Prokhorov Inst Gen Phys, Moscow, Russia
[2] Russian Acad Sci, AM Prokhorov Gen Phys Inst, Nat Res Ctr, Moscow, Russia
来源：
RADIOPHYSICS AND QUANTUM ELECTRONICS | 2007年 / 50卷 / 10-11期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1007/s11141-007-0073-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first measurements of dielectric-permittivity and conductivity spectra of several samples of nano-porous silicon prepared by anodization of low-resistance monocrystalline silicon are performed at room temperature by means of subterahertz and IR spectroscopy in the frequency range 7-4000 cm(-1). The obtained spectra are analyzed in terms of the effective-medium theory with a size-dependent dielectric-response function of nanoinclusions and average dielectric parameters of the surronding medium. It is found that the dielectric properties of the inclusions are dependent on nano-size effects such as charge-carrier scattering at the boundaries of the nanocrystallites and increase in the band-gap energy due to the quantum size effect. The geometric and dielectric characteristics of silicon nano-size inclusions are determined. We consider the mechanisms of variation in the wide-band dielectric permittivity and conductivity spectra of monocrystalline silicon during transformation of its structure from monocrystalline to nano-porous.
引用
收藏
页码：823 / 831
页数：9
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