Strain-controlled anisotropic electronic transport in Bi0.4Ca0.6MnO3 films

被引：10
作者：
Chen, Y. Z.
Sun, J. R. [1 ]
Liang, S.
Lu, W. M.
Shen, B. G.
机构：
[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 11期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.3035914
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Structural and resistive anisotropy has been studied for the Bi0.4Ca0.6MnO3 films grown on (011)-oriented SrTiO3 substrates. Strong anisotropic transport behaviors are observed when significant lattice strains exist. The ratio of the two resistivities along the a and c axes of the films can be tuned between similar to 1 and similar to 13 by adjusting the a/c ratio between similar to 1.01 and similar to 1.04, which can be conducted simply by decreasing film thickness from 100 to 10 nm. Considerable anisotropy emerges and develops when film thickness drops below similar to 60 nm. With the decrease in film thickness, a change in preferred growth direction of the films is also observed. These features of the lattice effects could be useful for the design of artificial materials and devices. (c) 2008 American Institute of Physics. [DOI: 10.1063/1.3035914]
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页数：4
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