Effects of line width and dose on electron beam nano-patterning of ma-N 2403

被引：1
|
作者：
Hwang, IH [1 ]
Lee, JH [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Dept Mechatron, MEMS & NanoPhoton Lab, Kwangju 500712, South Korea
来源：
ELECTRONICS LETTERS | 2006年 / 42卷 / 04期
关键词：
Photoresists;
D O I：
10.1049/el:20063408
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of dose on pattern shape were evaluated for electron beam nano-lithography of a negative photoresist, ma-N 2403, under an electron beam condition of 20 keV with a probe current of 9 pA. With sufficient design width, i.e. 250 am, there was negligible loss of pattern height, which was attributed to the combined dose of the incident electron beam and the back scattered electrons. The dose for narrow design width should be adjusted to obtain patterns of high aspect ratio with no loss of height and reduced patient width difference from the design width.
引用
收藏
页码：242 / 244
页数：3
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