Effects of Zn addition on electromigration behavior of Sn-1Ag-0.5Cu solder interconnect

被引:21
作者
Liu, H. Y. [1 ]
Zhu, Q. S. [1 ]
Wang, Z. G. [1 ]
Guo, J. D. [1 ]
Shang, J. K. [1 ,2 ]
机构
[1] Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
[2] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
基金
中国国家自然科学基金;
关键词
INTERMETALLIC COMPOUND FORMATION; SN-3.8AG-0.7CU SOLDER; MICROSTRUCTURE; CU;
D O I
10.1007/s10854-012-0714-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Effects of electromigration on microstructure and tensile property were studied in the Sn-1Ag-0.5Cu and Sn-1Ag-0.5Cu-1Zn solder interconnects. While the polarity effect and strength reduction from electromigration occurred in the Sn-1Ag-0.5Cu solder interconnects, they were suppressed by the Zn addition in the Sn-1Ag-0.5Cu-1Zn solder interconnects. Such a strong effect of Zn was explained by the strong binding of Zn with Cu, which prevented the dissolution of the IMC at the cathode, and by the reverse migration of the Zn elements, which counteracted the increase in the vacancy concentration so that the strength reduction was successfully inhibited.
引用
收藏
页码:211 / 216
页数:6
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