Synthesis and characterization of undoped, Al and/or Ho doped ZnO thin Films

被引：41

作者：

Mereu, R. A. ^{[1
]}

Mesaros, A. ^{[1
]}

Vasilescu, M. ^{[2
]}

Popa, M. ^{[1
]}

Gabor, M. S. ^{[1
]}

Ciontea, L. ^{[1
]}

Petrisor, T. ^{[1
]}

机构：

[1] Tech Univ Cluj Napoca, Cluj Napoca 400114, Romania

[2] Ilie Murgulescu Inst Phys Chem, Bucharest 060021, Romania

来源：

CERAMICS INTERNATIONAL | 2013年 / 39卷 / 05期

关键词：

Optical properties; Zinc oxide; Thin films; Aqueous solution deposition; Luminescence; POLYCRYSTALLINE ZINC-OXIDE; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; LUMINESCENCE; TEMPERATURE; EMISSION; IONS;

D O I：

10.1016/j.ceramint.2012.12.067

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The deposition of undoped, aluminum and/or holmium doped and co-doped zinc oxide thin films on different substrates was achieved using a very simple and versatile aqueous solution method. The effect of the precursor solution concentration on the morphological and structural characteristics, as well as on the optical properties of the undoped ZnO thin films was also investigated. The AFM investigations have revealed that the morphology of the films is smooth and homogeneous. The room-temperature photoluminescence (PL) and the optical absorption (UV-vis) properties of the as-obtained undoped and doped ZnO thin films were investigated, as well. A strong UV emission (380 nm) was recorded for the undoped, aluminum and holmium doped and co-doped ZnO thin films. The band gap value obtained for the doped ZnO thin films is ranging between 3.01 eV and 3.56 eV, depending on the nature and the concentration of the dopant. (C) 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：5535 / 5543

页数：9

共 35 条

[1] A comparative analysis of deep level emission in ZnO layers deposited by various methods [J].