Low-Dielectric-Constant Novel Periodic Mesoporous Organosilica Thin Film for Interlayer Dielectric

被引：0
|
作者：
Zhang, Jiawei [1 ,2 ]
Zhang, Guoping [1 ]
Sun, Rong [1 ]
Lee, S. W. Ricky [3 ]
Wong, C. P. [4 ,5 ]
机构：
[1] Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen, Peoples R China
[2] USTC, Nano Sci & Technol Inst, Suzhou, Peoples R China
[3] HKUST, Dept Mech & Aerosp Engn, Hong Kong, Hong Kong, Peoples R China
[4] Georgia Institube Technol, Sch Mat Sci & Engn, 771 Ferst Dr, Atlanta, GA 30332 USA
[5] Chinese Univ Hong Kong, Fac Engn, Hong Kong 999077, Hong Kong, Peoples R China
来源：
2016 17TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT) | 2016年
关键词：
low dielectric constant; periodic mesoporous organosilica; mechanical property; PMO;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-dielectric-constant organosilica was developed for interlayer dielectric, introducing adamantane which possesses low polarity and unique rigid structure. Novel organosilane precursor, adamantane-bridged organosilane precursor, was synthesized and characterized. Precursor was mixed with porogen P123, acid and ethanol to prepare coating solution, and the novel periodic meso porous organosilica (PMO) thin film was prepared via evaporation-induced self-assembly method. The PMO thin film presents ultra-low dielectric constants (1.56@1 MHz) and high Young's modulus (6.69 +/- 0.54 GPa) via optimizing the porogen content, besides it shows order structure and hydrophobic property.
引用
收藏
页码：153 / 156
页数：4
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