Thermally Stable Bonding of SiC Devices with Ceramic Substrates: Transient Liquid Phase Sintering Using Cu/Sn Powders

被引：29

作者：

Lang, Fengqun ^{[1
]}

Yamaguchi, Hiroshi ^{[1
]}

Nakagawa, Hiroshi ^{[1
]}

Sato, Hiroshi ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2013年 / 160卷 / 08期

关键词：

INTERFACIAL REACTIONS; RELIABILITY; DIFFUSION; GROWTH; LAYER;

D O I：

10.1149/2.114308jes

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A high-temperature-resistant bond withstanding up to 415 degrees C for SiC power devices is realized at 260 degrees C with a Cu/Sn powder paste and an electroless nickel plated Si3N4/Cu circuit substrate. The bond was formed by using transient liquid phase sintering (TLPS). The bond strength tested at 300 degrees C increases with increasing aging time at 300 degrees C, from the original 40 MPa to 50 MPa after aging at 300 degrees C for 200 h. This is attributed to phase transformation from Cu6Sn5 formed during TLPS to Cu3Sn in the bond during aging. We observed an eta-(Cu,Ni)(6.26)Sn-5 phase at the interface between the TLPS Cu-Sn bond and Ni(P) layer. The interface between the TLPS Cu-Sn bond and Si3N4/Cu/Ni(P)/Ag substrate exhibits very high stability, characterized by a very slow Ni(P) layer consumption rate and Ni3P growth rate. The TLPS Cu-Sn bond on a 5 mu m-thick electroless plated nickel layer is expected to have a life time beyond 10(5) h during storage at 300 degrees C. (C) 2013 The Electrochemical Society. All rights reserved.

引用

页码：D315 / D319

页数：5

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