Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrOx Gate Insulator

We report the effect of purification of ZrOx precursor on the performance of solution processed amorphous indium-zinc-tin oxide thin-film transistors with a ZrOx gate insulator, which is processed at the maximum temperature of 300 degrees C in air. By purification, the saturation mobility (mu(sat)) increases from 2.45 +/- 0.83 to 15.42 +/- 4.01 cm(2)V(-1)s(-1), subthreshold swing decreases from 141.44 +/- 14.08 to 87.90 +/- 11.05 mV/decade and drain current ON/OFF ratio increases from similar to 10(7) to similar to 10(9). The leakage currents are remarkably reduced by using purified ZrOx as a gate insulator. The improvement is mainly due to the reduced impurities and less oxygen vacancies in ZrOx.