High-temperature operation of 1.26 μm Fabry-Perot laser with InGaAs metamorphic buffer on GaAs substrate

被引：12

作者：

Arai, M. ^{[1
]}

Fujisawa, T. ^{[1
]}

Kobayashi, W. ^{[1
]}

Nakashima, K. ^{[1
]}

Yuda, M. ^{[1
]}

Kondo, Y. ^{[1
]}

机构：

[1] NTT Corp, NTT Photon Labs, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 23期

关键词：

D O I：

10.1049/el:20082657

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1.26 mu m ridge waveguide laser diode with an InGaAs metamorphic buffer on a GaAs substrate grown by metal-organic vapour-phase epitaxy has been successfully developed. This laser has achieved the highest operating temperature (173 degrees C) for continuous-wave operation reported for a metamorphic laser.

引用

页码：1359 / U36

页数：2

共 4 条

[1] High-characteristic-temperature 1.3-μm-band laser on an InGaAs ternary substrate grown bythe traveling liquidus-zone method [J].