Comparative study of electroluminescence from annealed amorphous SiC single layer and amorphous Si/SiC multilayers

被引：12

作者：

Rui, Yunjun ^{[1
,2
,3
]}

Li, Shuxin ^{[1
,2
]}

Xu, Jun ^{[1
,2
]}

Cao, Yunqing ^{[1
,2
]}

Li, Wei ^{[1
,2
]}

Chen, Kunji ^{[1
,2
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[3] Nanjing Univ Technol, Dept Appl Phys, Nanjing 210009, Peoples R China

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2012年 / 358卷 / 17期

关键词：

Silicon carbide; Multilayer; Electroluminescence; Si quantum dots; Carrier tunneling; QUANTUM DOTS; NANOCRYSTALS; DEVICES; MATRIX;

D O I：

10.1016/j.jnoncrysol.2012.01.054

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Si quantum dots (Si QDs) films were prepared by annealing amorphous SiC single layer and amorphous Si/SiC multilayers fabricated in plasma enhanced chemical vapor deposition system. The microstructures were characterized by Raman spectroscopy as well as Fourier transforms infrared spectroscopy for both samples. It was found that Si QDs with average size of 2.7 nm were formed after annealing and the electroluminescence (EL) band centered at 650 nm can be observed at room temperature. The EL intensity from the Si/SiC multilayers was obviously improved by one order of magnitude and the corresponding EL band width was reduced compared with that from SiC single layer film. The improved electroluminescence behavior can be attributed to the formation of the denser Si QDs, good size distribution and the strong confinement effect of carriers in multilayerd structures. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：2114 / 2117

页数：4

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