Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates

被引：17

作者：

Izhnin, I. I. ^{[1
]}

Izhnin, A. I. ^{[1
]}

Savytskyy, H. V. ^{[1
]}

Vakiv, M. M. ^{[1
]}

Stakhira, Y. M. ^{[2
]}

Fitsych, O. E. ^{[2
]}

Yakushev, M. V. ^{[3
]}

Sorochkin, A. V. ^{[3
]}

Sabinina, I. V. ^{[3
]}

Dvoretsky, S. A. ^{[3
]}

Sidorov, Yu G. ^{[3
]}

Varavin, V. S. ^{[3
]}

Pociask-Bialy, M. ^{[4
]}

Mynbaev, K. D. ^{[5
]}

机构：

[1] R&D Inst Mat SRC Carat, UA-79031 Lvov, Ukraine

[2] Ivan Franko Natl Univ Lviv, UA-79000 Lvov, Ukraine

[3] Russian Acad Sci, AV Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[4] Rzeszow Univ, Inst Phys, PL-35310 Rzeszow, Poland

[5] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2012年 / 27卷 / 03期

关键词：

INFRARED HGCDTE; SCATTERING; EPILAYERS;

D O I：

10.1088/0268-1242/27/3/035001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ion milling-assisted study of defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates was performed. The films appeared to contain initially neutral Te-related defects with concentration of 10(17) cm(-3), typical of HgCdTe. The concentration of residual donors was found to be quite low ((3-8) x 10(14) cm(-3)). Specific to HgCdTe/Si technology appeared to be a considerable number of stacking faults, which affected the carrier mobility in n-type material. These defects can be annealed in He atmosphere at 230 degrees C, and after ion milling the electrical parameters of n-type HgCdTe/Si films approach those of high-quality bulk crystals.

引用

页数：4

共 20 条

[1] Variable area MWIR diodes on HgCdTe/Si grown by molecular beam epitaxy [J].