Ultralow drive voltage silicon traveling-wave modulator

被引：152
作者：
Baehr-Jones, Tom [1 ]
Ding, Ran [1 ]
Liu, Yang [1 ]
Ayazi, Ali [1 ]
Pinguet, Thierry [1 ]
Harris, Nicholas C. [1 ]
Streshinsky, Matt [1 ]
Lee, Poshen [1 ]
Zhang, Yi [1 ]
Lim, Andy Eu-Jin [2 ]
Liow, Tsung-Yang [2 ]
Teo, Selin Hwee-Gee [2 ]
Lo, Guo-Qiang [2 ]
Hochberg, Michael [3 ]
机构：
[1] Univ Washington, Dept Elect Engn, Seattle, WA 98195 USA
[2] ASTAR, Inst Microelect, Singapore 117685, Singapore
[3] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA
来源：
OPTICS EXPRESS | 2012年 / 20卷 / 11期
关键词：
OPTICAL MODULATOR; GB/S;
D O I：
10.1364/OE.20.012014
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
There has been great interest in the silicon platform as a material system for integrated photonics. A key challenge is the development of a low-power, low drive voltage, broadband modulator. Drive voltages at or below 1 Vpp are desirable for compatibility with CMOS processes. Here we demonstrate a CMOS-compatible broadband traveling-wave modulator based on a reverse-biased pn junction. We demonstrate operation with a drive voltage of 0.63 Vpp at 20 Gb/s, a significant improvement in the state of the art, with an RF energy consumption of only 200 fJ/bit. (c) 2012 Optical Society of America
引用
收藏
页码：12014 / 12020
页数：7
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