A high thermoelectric figure of merit ZT > 1 in Ba heavily doped BiCuSeO oxyselenides

被引：334

作者：

Li, Jing ^{[1
]}

Sui, Jiehe ^{[1
]}

Pei, Yanling ^{[2
]}

Barreteau, Celine ^{[3
]}

Berardan, David ^{[3
]}

Dragoe, Nita ^{[3
]}

Cai, Wei ^{[1
]}

He, Jiaqing ^{[4
]}

Zhao, Li-Dong ^{[3
]}

机构：

[1] Harbin Inst Technol, Sch Mat Sci & Engn, Natl Key Lab Precis Hot Proc Met, Harbin 150001, Peoples R China

[2] Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China

[3] Univ Paris 11, LEMHE, ICMMO, CNRS UMR 8182, F-91405 Orsay, France

[4] Xi An Jiao Tong Univ, FIST, Xian 710054, Peoples R China

来源：

ENERGY & ENVIRONMENTAL SCIENCE | 2012年 / 5卷 / 09期

基金：

中国国家自然科学基金;

关键词：

NANOSTRUCTURED THERMOELECTRICS; THERMAL-CONDUCTIVITY; PERFORMANCE; ENHANCEMENT; OXIDE; PBS; EFFICIENCY; PBTE;

D O I：

10.1039/c2ee22622g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A high ZT value of similar to 1.1 at 923 K in the BiCuSeO system is achieved via heavily doping with Ba and refining grain sizes (200-400 nm), which is higher than any thermoelectric oxide. Excellent thermal and chemical stabilities up to 923 K and high thermoelectric performance confirm that the BiCuSeO system is promising for thermoelectric power generation applications.

引用

页码：8543 / 8547

页数：5

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A high thermoelectric figure of merit ZT &gt; 1 in Ba heavily doped BiCuSeO oxyselenides

A high thermoelectric figure of merit ZT > 1 in Ba heavily doped BiCuSeO oxyselenides