Magnetization reversal analysis for antiferromagnetic-coupled films with magnetic field angle dependence

被引:0
作者
Ren, HB
Wang, JP
Ng, V
机构
[1] Natl Univ Singapore, Data Storage Inst, Singapore 117608, Singapore
[2] Natl Univ Singapore, Informat Storage Mat Lab, Dept Elect & Comp Engn, Singapore 117576, Singapore
关键词
D O I
10.1063/1.1453347
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this article, theoretical analysis for the antiferromagnetically coupled films (two layers system) with magnetic field angle dependence is presented. The nonlinear simulative equations for such medium have been deduced and solved by the graphic solution method. Through the analysis of the solutions of different magnetic parameters (K-1, K-2, M-1, M-2, t(1), t(2), and J) and applied magnetic field angle (theta), the relationship between the magnetic switching fields (h(1n),h(2n)) for each layer and the above magnetic parameters have been determined. The hysteresis loop with an applied field angle can be calculated and one example is plotted. By comparing the magnetic switching properties (h(1n),h(2n)) with that of single layer (h(n)), it has been found that for both the top-magnetic layer and bottom-magnetic layer, the difference of the switching field (h(1n)-h(n)) and (h(2n)-h(n)), which are brought by the antiferromagnetical coupling effect (J), are closely correlated with the applied field angle. (C) 2002 American Institute of Physics.
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页码:8623 / 8625
页数:3
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