Increasing mechanical strength of mesoporous silica thin films by addition of tetrapropylammonium hydroxide and refluxing processes

被引:11
作者
Tsai, Cheng-Tsung [1 ]
Lu, Hsin Yan [1 ]
Ting, Chih-Yuan [1 ]
Wu, Wen-Fa [2 ]
Wan, Ben-Zu [1 ]
机构
[1] Natl Taiwan Univ, Dept Chem Engn, Taipei 106, Taiwan
[2] Natl Nano Device Labs, Hsinchu 300, Taiwan
关键词
Low-k film; Mesoporous; Silica; Mechanical strength; Reflux; Tetrapropylammonium hydroxide (TPAOH); Low dielectric constant;
D O I
10.1016/j.tsf.2008.10.012
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The incorporation of mesopores into silica films is an effective way to reduce the dielectric constant. However. the pores reduce the film mechanical strength. This Study investigates two steps for preparing coating solution. One was the reflux of the silica colloid at 70 degrees C. The other was the addition of TPAOH (tetrapropylammonium hydroxide) into the colloid. The reflux step can increase the mechanical strength, reduce the flat band voltage and reduce the leakage current of the films. Nevertheless, the low-k value (k represents dielectric constant) increases as the porosity of the film falls. Adding a slight amount of TPAOH before the reflux process can recover both the porosity and the low k Value, while maintaining the high mechanical strength a id the low flat band voltage. Results of this Study demonstrate that two more steps (the addition of TPAOH and the reflux) in the preparation of the coating solution can increase the film hardness and elastic modulus from 0.8 to 1.4 GPa and from 5.8 to 9.9 GPa respectively, while maintaining the low-k value close to 2.05. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:2039 / 2043
页数:5
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