Nanocolumnar Interfaces and Enhanced Magnetic Coercivity in Preferentially oriented Cobalt Ferrite Thin Films Grown Using Oblique-Angle Pulsed Laser Deposition
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作者:
Mukherjee, Devajyoti
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Univ S Florida, CIFM, Tampa, FL 33620 USAUniv S Florida, CIFM, Tampa, FL 33620 USA
Highly textured cobalt ferrite (CFO) thin films were grown on Si (100) substrates using oblique-angle pulsed laser deposition (alpha-PLD). X-ray diffraction and in-depth strain analysis showed that the obliquely deposited CFO films had both enhanced orientation in the (111) crystal direction as well as tunable compressive strains as a function of the film thicknesses, in contrast to the almost strain-free polycrystalline CFO films grown using normal-incidence PLD under the same conditions. Using in situ optical plume diagnostics the growth parameters in the alpha-PLD process were optimized to achieve smoother film surfaces with roughness values as low as 1-2 nm as compared to the typical values of 10-12 nm in the normal-incidence PLD grown films. Cross-sectional high resolution transmission electron microscope images revealed nanocolumnar growth of single-crystals of CFO along the (111) crystallographic plane at the film-substrate interface. Magnetic measurements showed larger coercive fields (similar to 10 times) with similar saturation magnetization in the alpha-PLD-grown CFO thin films as compared to those deposited using normal-incidence PLD. Such significantly enhanced magnetic coercivity observed in CFO thin films make them ideally suited for magnetic data storage applications. A growth mechanism based on the atomic shadowing effect and strain compression-relaxation mechanism was proposed for the obliquely grown CFO thin films.
机构:
Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Suen, Chun Hung
Shi, Dongliang
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Hong Kong Polytech Univ, Dept Elect Engn, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Shi, Dongliang
Su, Y.
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Hong Kong Univ Sci & Technol, Dept Mech & Aerosp Engn, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Su, Y.
Zhang, Zhi
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Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Zhang, Zhi
Chan, Cheuk Ho
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Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Chan, Cheuk Ho
Tang, Xiaodan
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Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Tang, Xiaodan
Li, Y.
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Hong Kong Univ Sci & Technol, Dept Mech & Aerosp Engn, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Li, Y.
Lam, Kwok Ho
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Hong Kong Polytech Univ, Dept Elect Engn, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Lam, Kwok Ho
Chen, Xinxin
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Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Chen, Xinxin
Huang, B. L.
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Hong Kong Univ Sci & Technol, Dept Mech & Aerosp Engn, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Huang, B. L.
Zhou, X. Y.
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Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Zhou, X. Y.
Dai, Ji-Yan
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Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China