Quantum-well-base heterojunction bipolar light-emitting transistor

This letter reports the enhanced radiative recombination realized by incorporating InGaAs quantum wells in the base layer of light-emitting InGaP/GaAs heterojunction bipolar transistors (LETs) operating in the common-emitter configuration. Two 50 Angstrom In1-xGaxAs (x=85%) quantum wells (QWs) acting, in effect, as electron capture centers ("traps") are imbedded in the 300 Angstrom GaAs base layer, thus improving (as a "collector" and recombination center) the light emission intensity compared to a similar LET structure without QWs in the base. Gigahertz operation of the QW LET with simultaneously amplified electrical output and an optical output with signal modulation is demonstrated. (C) 2004 American Institute of Physics.