Annealing of aluminum-silicon-dioxide-silicon structures after α-particle bombardment

被引：1

作者：

Vasin, SV ^{[1
]}

Tulvinskii, VB ^{[1
]}

Shipatov, ÉT ^{[1
]}

机构：

[1] Ulyanovsk State Univ, Ulyanovsk, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1999年 / 25卷 / 08期

关键词：

D O I：

10.1134/1.1262589

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An investigation is made of the isochronous annealing of Al-SiO2-Si structures in the temperature range 20-450 degrees C after bombardment with alpha-particles from a Cm-244 radioisotope source. In this temperature range it is observed that the positive charge in the insulator falls below the initial values. The hypothesis is put forward that this effect may be the result of defect formation and structural rearrangements near the Si/SiO2 interphase boundary during irradiation and annealing. (C) 1999 American Institute of Physics. [S1063-7850(99)02508-2].

引用

页码：660 / 661

页数：2

共 7 条

[1]

[Anonymous], 1990, DEFECTS SILICON ITS

[2] THE STRUCTURE OF SIO2, ITS DEFECTS AND RADIATION HARDNESS [J].