Extraction of effective mobility of In0.8Ga0.2As/In0.52Al0.48As quantum well high-electron-mobility transistors on InP substrate

被引：4

作者：

Park, Wan-Soo ^{[1
]}

Kim, Jun-Gyu ^{[1
]}

Yun, Seung-Won ^{[1
]}

Jeong, Hyeon-Seok ^{[1
]}

Jo, Hyeon-Bhin ^{[1
]}

Kim, Tae-Woo ^{[2
]}

Tsutsumi, Takuya ^{[3
]}

Sugiyama, Hiroki ^{[3
]}

Matsuzaki, Hideaki ^{[3
]}

Kim, Dae-Hyun ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu, South Korea

[2] Univ Ulsan, Sch Elect Engn, Ulsan, South Korea

[3] NTT Corp, NTT Device Technol Labs, Tokyo, Japan

来源：

SOLID-STATE ELECTRONICS | 2022年 / 197卷

基金：

新加坡国家研究基金会;

关键词：

HEMTs; Effective mobility; Compound semiconductor; III-V semiconductor; Split CV; Mobility;

D O I：

10.1016/j.sse.2022.108446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we explored the effective mobility of In-rich InxGa1-xAs/In0.52Al0.48As (x > 0.53) quantum well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate. Historically, the carrier transport prop-erties of these types of devices have been assessed mostly using their Hall mobility, not using the effective mobility, mainly because the excessive gate leakage current degrades and contaminates their measured capac-itance voltage (CV) characteristics. However, our recent studies on these devices achieved a significant reduction in the gate leakage current, which motivated us to explore their effective mobility. In this work, therefore, we used a conventional split CV technique to determine and analyze the effective mobility of In0.8Ga0.2As/ In0.52Al0.48As QW HEMTs. We also attempted to model the extracted effective mobility by considering three different scattering mechanisms-Coulombic scattering, phonon scattering and surface-roughness scattering- under the guidance of Matthiessen's rule.

引用

页数：6

共 13 条

[1] InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications [J].