Modeling of electrical characteristics of midwave type II InAs/GaSb strain layer superlattice diodes

被引：66

作者：

Gopal, V. ^{[1
]}

Plis, E. ^{[3
]}

Rodriguez, J. -B. ^{[3
]}

Jones, C. E. ^{[2
]}

Faraone, L. ^{[1
]}

Krishna, S. ^{[3
]}

机构：

[1] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia

[2] Lockheed Martin Santa Barbara Focal Plane, Goleta, CA 93117 USA

[3] Univ New Mexico, Dept Elect & Comp Engn, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 12期

关键词：

gallium compounds; III-V semiconductors; indium compounds; semiconductor diodes; semiconductor superlattices;

D O I：

10.1063/1.3042232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper reports the results of modeling of electrical characteristics of midinfrared type II InAs/GaSb strain layer superlattice (SLS) diode with p-on-n polarity. Bulk based model with the effective band gap of SLS material has been used in modeling of the experimental data. Temperature dependence of zero-bias resistance area product (R(0)A) and bias dependent dynamic resistance of the diode have been analyzed in detail to investigate dark current contributing mechanisms that are limiting the electrical performance of the diode. R(0)A of the diode is found to be limited by thermal diffusion currents at higher temperatures and Ohmic shunt resistance contribution limits it at low temperatures similar to 82 K.

引用

页数：6

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