AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3 μm grown by MOVPE on InP substrate

被引：8

作者：

Grasse, Christian ^{[1
]}

Mueller, Michael ^{[1
]}

Gruendl, Tobias ^{[1
]}

Boehm, Gerhard ^{[1
]}

Roenneberg, Enno ^{[2
]}

Wiecha, Peter ^{[1
]}

Rosskopf, Juergen ^{[2
]}

Ortsiefer, Markus ^{[2
]}

Meyer, Ralf ^{[1
]}

Amann, Markus-Christian ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] Vertilas GmbH, Gate Garching, D-85748 Garching, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 370卷

关键词：

Metalorganic vapor phase epitaxy; Antimonides; Phosphides; Semiconducting III-V materials; Laser diodes; SURFACE-EMITTING LASERS; WAVELENGTH; SEMICONDUCTORS; PARAMETERS;

D O I：

10.1016/j.jcrysgro.2012.06.051

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper we present the first InP-based short-cavity Vertical-Cavity Surface-Emitting Laser with an AlGaInAsP/GaInAsP active region and a re-grown and structured GaAs0.51Sb:C/Ga0.47InAs:Si buried tunnel junction (BTJ), which serves as current aperture, grown by LP-MOVPE. We achieved over 1 mW single-mode continuous-wave (cw) emission at around 1.3 mu m wavelength and room-temperature. The small-signal modulation bandwidth exceeds 7.5 GHz, which is appropriate for 10 Gb/s data transmission, and the series resistance is as low as 24 Omega. The latter value indicates around three times lower dissipated power consumption than comparable MOVPE grown InP-based VCSELs. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：217 / 220

页数：4

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