Bandgap renormalization due to high-density carriers in ZnO epitaxial thin films

被引：1
|
作者：
Yamamoto, A [1 ]
Kido, T
Goto, T
Chen, Y
Yao, T
机构：
[1] Tohoku Univ, Dept Phys, Grad Sch Sci, Aoba Ku, Sendai, Miyagi 9808578, Japan
[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2001年 / 15卷 / 28-30期
关键词：
D O I：
10.1142/S0217979201008548
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Renormalized bandgap energy due to high-density carriers in ZnO is calculated and compared with our experimental results. Two different reported treatments for the correlation energy are employed for the calculation, and we prove that Beni and Rice's model sufficiently explains the experimental data. Furthermore, we calculate optical gain spectrum, which reproduces well the experimental data.
引用
收藏
页码：3737 / 3740
页数：4
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