Silicon p-i-n Junction Fibers

被引：76

作者：

He, Rongrui ^{[1
]}

Day, Todd D. ^{[1
]}

Krishnamurthi, Mahesh ^{[2
,3
]}

Sparks, Justin R. ^{[1
]}

Sazio, Pier J. A. ^{[4
]}

Gopalan, Venkatraman ^{[2
,3
]}

Badding, John V. ^{[1
]}

机构：

[1] Penn State Univ, Res Inst, Dept Chem & Mat, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[3] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[4] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 10期

基金：

英国工程与自然科学研究理事会; 美国国家科学基金会;

关键词：

silicon; fibers; junctions; solar cells; optoelectronics; MICROSTRUCTURED OPTICAL-FIBERS; SOLAR-CELLS; DEVICES; ELECTRONICS; SEMITRANSPARENT; FABRICATION; PRINCIPLES; NANOWIRES; SENSORS; ARRAYS;

D O I：

10.1002/adma.201203879

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Flexible Si p-i-n junction fibers made by high pressure chemical vapor deposition offer new opportunities in textile photovoltaics and optoelectronics, as exemplified by their photovoltaic properties, gigahertz bandwidth for photodetection, and ability to waveguide light. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1461 / 1467

页数：7

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