Solar photocatalytic water oxidation over Ag3PO4/g-C3N4 composite materials mediated by metallic Ag and graphene

被引:88
作者
Cui, Xingkai [1 ]
Tian, Lin [1 ]
Xian, Xiaozhai [1 ]
Tang, Hua [1 ]
Yang, Xiaofei [1 ,2 ]
机构
[1] Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China
[2] Fuzhou Univ, State Key Lab Photocatalysis Energy & Environm, Fuzhou 350116, Fujian, Peoples R China
基金
中国国家自然科学基金;
关键词
Graphitic carbon nitride (g-C3N4); Graphene; Ag3PO4; Photocatalytic oxygen evolution; Z-scheme; Water splitting; CARBON NITRIDE; AG3PO4; SEMICONDUCTOR; PERFORMANCE; STABILITY; EFFICIENT; FABRICATION; OXIDE;
D O I
10.1016/j.apsusc.2017.07.290
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Solar-driven water splitting over semiconductor-based photocatalysts provides direct conversion of solar energy to chemical energy, in which electron-hole separation and charge transport are critical for enhancing the photocatalytic activity of semiconducting materials. Moreover, the search for active photocatalysts that efficiently oxidize water remains a challenging task. Here, we demonstrate that a series of Ag3PO4/Ag/graphene/graphitic carbon nitride (g-C3N4) heterostructured materials can drive photocatalytic water oxidation efficiently under LED illumination. The water oxidation behavior of as-prepared composite photocatalysts in relation to the added amount of g-C3N4 and the roles of electron mediators was investigated in detail. Based on the illuminated Z-scheme photocatalytic mechanism, the photogenerated electrons and holes can be separated effectively and the electron-hole recombination of bulk material is suppressed. The reduced metallic Ag nanoparticles were found to function as the center for the accumulation of electrons from Ag3PO4 and holes from g-C3N4. By exploiting the proper addition of g-C3N4 into the composite, photocatalytic oxygen evolution performance over the heterostructured materials could be suitably tuned, which resulted in highly efficient water oxidation. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:108 / 115
页数:8
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