Effect of Annealing on the Structural and Electrical Properties of High-k Sm2O3 Dielectrics

被引：27

作者：

Pan, Tung-Ming ^{[1
]}

Huang, Chun-Chin ^{[1
]}

You, Shi-Xian ^{[1
]}

Yeh, Chih-Cheng ^{[1
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 12期

关键词：

D O I：

10.1149/1.2990226

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this paper, the authors report a high-k samarium oxide (Sm(2)O(3)) dielectric grown on the silicon substrate by reactive sputtering. We find that the Sm(2)O(3) gate dielectric after annealing at 700 degrees C exhibits excellent electrical properties such as small equivalent oxide thickness, gate leakage current, frequency dispersion, and stress-induced leakage current. This indicates that annealing at 700 degrees C treatment can prevent the interfacial layer formation, improve the surface roughness, and passivate a large amount of trapped charge at defect sites. (C) 2008 The Electrochemical Society. [DOI: 10.1149/1.2990226] All rights reserved.

引用

页码：G62 / G65

页数：4

共 18 条

[11] Modeling and simulation of stress-induced leakage current in ultrathin SiO2 films
Ricco, B
Gozzi, G
Lanzoni, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (07) : 1554 - 1560
[12] Silicon MIS structures using samarium oxide films
Rozhkov, VA
Trusova, AY
Berezhnoy, IG
[J]. THIN SOLID FILMS, 1998, 325 (1-2) : 151 - 155
[13] Schroder D., 2006, Semiconductor material and device characterization, Vthird
[14] Determination of Sm2O3/GaAs heterojunction band offsets by x-ray photoelectron spectroscopy
Stewart, A. D.
Gerger, A.
Gila, B. P.
Abernathy, C. R.
Pearton, S. J.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (15)
[15] UWAMINO Y, 1984, J ELECT SPECTROSC RE, V34, P69
[16] High-κ gate dielectrics:: Current status and materials properties considerations
Wilk, GD
Wallace, RM
Anthony, JM
[J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) : 5243 - 5275
[17] Structural and dielectric properties of epitaxial Sm2O3 thin films
Yang, H.
Wang, H.
Luo, H. M.
Feldmann, D. M.
Dowden, P. C.
DePaula, R. F.
Jia, Q. X.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (06)
[18] MOS capacitance measurements for high-leakage thin dielectrics
Yang, KJ
Hu, CM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (07) : 1500 - 1501

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