Effect of Annealing on the Structural and Electrical Properties of High-k Sm2O3 Dielectrics

被引：27

作者：

Pan, Tung-Ming ^{[1
]}

Huang, Chun-Chin ^{[1
]}

You, Shi-Xian ^{[1
]}

Yeh, Chih-Cheng ^{[1
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 12期

关键词：

D O I：

10.1149/1.2990226

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this paper, the authors report a high-k samarium oxide (Sm(2)O(3)) dielectric grown on the silicon substrate by reactive sputtering. We find that the Sm(2)O(3) gate dielectric after annealing at 700 degrees C exhibits excellent electrical properties such as small equivalent oxide thickness, gate leakage current, frequency dispersion, and stress-induced leakage current. This indicates that annealing at 700 degrees C treatment can prevent the interfacial layer formation, improve the surface roughness, and passivate a large amount of trapped charge at defect sites. (C) 2008 The Electrochemical Society. [DOI: 10.1149/1.2990226] All rights reserved.

引用

页码：G62 / G65

页数：4

共 18 条

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