44-Gb/s Silicon Microring Modulators Based on Zigzag PN Junctions

被引：100

作者：

Xiao, Xi ^{[1
]}

Li, Xianyao ^{[1
]}

Xu, Hao ^{[1
]}

Hu, Yingtao ^{[1
]}

Xiong, Kang ^{[1
]}

Li, Zhiyong ^{[1
]}

Chu, Tao ^{[1
]}

Yu, Jinzhong ^{[1
]}

Yu, Yude ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2012年 / 24卷 / 19期

基金：

中国国家自然科学基金;

关键词：

High speed; microring resonator (MRR); optical modulation; silicon modulators;

D O I：

10.1109/LPT.2012.2213244

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We experimentally demonstrate silicon microring modulators with >40-Gb/s modulation speed based on the carrier-depletion mechanism in reverse-biased PN junctions. A novel zigzag PN junction providing a modulation efficiency of 3.85 x 10(-5)/V and a resistance-capacitance bandwidth of 51 GHz is proposed and demonstrated. The moderate Q factor of similar to 8 000 and the operation wavelength detuning are optimized to relieve photon-lifetime-induced bandwidth limitation. Finally, with a voltage swing of 3 V, high-speed modulation of 20 and 44 Gb/s is experimentally demonstrated with the extinction ratio of 3.45 and 3.01 dB, showing great potential in the application of ultrahigh-capacity optical interconnects.

引用

页码：1712 / 1714

页数：3

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