44-Gb/s Silicon Microring Modulators Based on Zigzag PN Junctions

被引:100
作者
Xiao, Xi [1 ]
Li, Xianyao [1 ]
Xu, Hao [1 ]
Hu, Yingtao [1 ]
Xiong, Kang [1 ]
Li, Zhiyong [1 ]
Chu, Tao [1 ]
Yu, Jinzhong [1 ]
Yu, Yude [1 ]
机构
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
High speed; microring resonator (MRR); optical modulation; silicon modulators;
D O I
10.1109/LPT.2012.2213244
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We experimentally demonstrate silicon microring modulators with >40-Gb/s modulation speed based on the carrier-depletion mechanism in reverse-biased PN junctions. A novel zigzag PN junction providing a modulation efficiency of 3.85 x 10(-5)/V and a resistance-capacitance bandwidth of 51 GHz is proposed and demonstrated. The moderate Q factor of similar to 8 000 and the operation wavelength detuning are optimized to relieve photon-lifetime-induced bandwidth limitation. Finally, with a voltage swing of 3 V, high-speed modulation of 20 and 44 Gb/s is experimentally demonstrated with the extinction ratio of 3.45 and 3.01 dB, showing great potential in the application of ultrahigh-capacity optical interconnects.
引用
收藏
页码:1712 / 1714
页数:3
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