A GaAs planar Schottky varactor diode for left-handed nonlinear transmission line applications

被引:2
作者
Dong Jun-Rong [1 ]
Yang Hao [1 ]
Tian Chao [1 ]
Huang Jie [1 ]
Zhang Hai-Ying [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Shenyang Zhongke Microelect Ltd Co, Shenyang 110179, Peoples R China
基金
中国国家自然科学基金;
关键词
GaAs; planar Schottky varactor diode; left-handed nonlinear transmission lines; frequency doubler;
D O I
10.1088/1674-1056/21/6/067303
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The left-handed nonlinear transmission line (LH-NLTL) based on monolithic microwave integrated circuit (MMIC) technology possesses significant advantages such as wide frequency band, high operating frequency, high conversion efficiency, and applications in millimeter and submillimeter wave frequency multiplier. The planar Schottky varactor diode (PSVD) is a major limitation to the performance of the LH-NLTL frequency multiplier as a nonlinear component. The design and the fabrication of the diode for such an application are presented. An accurate large-signal model of the diode is proposed. A 16 GHz-39.6 GHz LH-NLTL frequency doubler using our large-signal model is reported for the first time. The measured maximum output powers of the 2nd harmonic are up to 8 dBm at 26.4 GHz, and above 0 dBm from 16 GHz to 39.6 GHz when the input power is 20 dBm. The application of the LH-NLTL frequency doubler furthermore validates the accuracy of the large-signal model of the PSVD.
引用
收藏
页数:6
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