Nonvolatile Ferroelectric Memory Thin-Film Transistors Using a Poly(Vinylidene Fluoride Trifluoroethylene) Gate Insulator and an Oxide Semiconductor Active Channel

Nonvolatile memory thin-film transistor using an organic ferroelectric gate insulator and oxide semiconductor active channel is proposed as a promising memory element embedded onto the next-generation flexible and transparent electronic systems. In this chapter, some important technical issues for this device, such as device structure, process optimization, and memory array integration, are extensively discussed. Feasible applications and remaining technological issues to be solved for practical applications are also reviewed.