Influence of fluorine doped CdO thin films by an simplified spray pyrolysis technique using nebulizer

被引:26
|
作者
Anitha, M. [1 ,3 ]
Saravanakumar, K. [2 ,4 ]
Anitha, N. [1 ]
Amalraj, L. [1 ]
机构
[1] VHNSN Coll Autonomous, Res Dept Phys, Virudunagar 626001, Tamil Nadu, India
[2] VHNSN Coll Autonomous, Dept Chem, Virudunagar 626001, Tamil Nadu, India
[3] Sri Vidhya Coll Arts & Sci, Dept Phys, Virudunagar 626001, Tamil Nadu, India
[4] Sri Kaliswari Coll Autonomous, Dept Chem, Sivakasi 626130, Tamil Nadu, India
关键词
Semiconductor; Cadmium oxide; Thin films; Optical properties; Electrical properties; PHYSICAL-PROPERTIES; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; CADMIUM-OXIDE; TRANSPARENT; DEPOSITION; TEMPERATURE; NANOPARTICLES; FABRICATION;
D O I
10.1007/s11082-019-1901-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The Cadmium oxide (CdO) and Fluorine (F) doped CdO thin films were effectively synthesized on glass substrates for different F doping concentrations (2, 4, 6, 8at.%) using nebulized spray pyrolysis technique. The XRD analysis showed that all the films were polycrystalline having cubic structure with (111) preferential orientation. It was seen from the SEM photographs that the doping causes remarkable changes in the surface morphology. EDAX analysis clearly confirmed that the presence of expected elements cadmium, oxygen and fluorine in the final product, in appropriate proportions. The electrical study showed that the minimum resistivity value of 1.9x10(-4)cm with notable higher values of carrier concentration and mobility was achieved for 6at.% of CdO:F film. Optical study exhibited that the band gap value of CdO film increases gradually with the increase in F-doping concentration, reaching maximum band gap value of 2.61eVat 6at.% and starts decreasing thereafter. Photoluminescence spectra depicted that the intensity of the emission peaks was significantly varied with doping concentrations. The high transparency, wide band gap energy, enhanced electrical properties and light sensitivity had been obtained infer that F-doped CdO thin films which find application in optoelectronic applications. [GRAPHICS] .
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页数:22
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