Low-temperature fabrication of Pb(Zr0.52Ti0.48)O3 films using a new chemical solution deposition method without post-annealing

Pb(Zr0.52Ti0.48)O-3 (PZT) films have been fabricated on Pt/Ti/SiO2/Si substrates with a new chemical solution deposition technique, in which each layer of PbZrO3 (PZ) and PbTiO3 (PT) was heated to 600degreesC as soon as it was spin coated. The fabrication of the homogeneous PZT film was finished through the reaction between the PT and PZ layers and without post-annealing. By surveying the variations of the surface micrographs during the deposition process, an island-column hybrid growth mode could be concluded. The low-temperature fabrication brings about enhanced fatigue resistance because of the suppression of the formation of the oxygen vacancies. Measurements of the ferroelectric properties suggest a promising application for the ferroelectric memory devices. (C) 2004 Elsevier B.V. All rights reserved.