Thermal stability of Gd2O3/Si(100) interfacial transition layer

被引：1
|
作者：
Nohira, H
Yoshida, T
Okamoto, H
Shinagawa, S
Sakai, W
Nakajima, K
Suzuki, M
Kimura, K
Aun, NJ
Kobayashi, Y
Ohmi, S
Iwai, H
Ikenaga, E
Takata, Y
Kobayashi, K
Hattori, T
机构：
[1] Musashi Inst Technol, Setagaya Ku, Tokyo 1588557, Japan
[2] Kyoto Univ, Sakyo Ku, Kyoto 6068501, Japan
[3] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 2268502, Japan
来源：
JOURNAL DE PHYSIQUE IV | 2006年 / 132卷
关键词：
D O I：
10.1051/jp4:2006132052
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Thermal stability of Gd2O3/Si(100) interfacial transition layer was studied by analyzing the angle-resolved Si 2p and Gd 4d photoelectron spectra. Following results were obtained: The compositional depth profile of Gd2O3/Si(100) changed slightly by post deposition annealing (PDA) in nitrogen gas under atmospheric pressure below 300 degrees C. The analyses of 0 1s and Si 2p spectra indicated that the Gd-silicate consisting of Gd-O-Si bonds was produced near the Gd2O3/Si(100) interface without annealing and the amount of Gd-silicate increased by PDA above 400 degrees C.
引用
收藏
页码：273 / 277
页数：5
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