Thermal stability of Gd2O3/Si(100) interfacial transition layer

被引:1
|
作者
Nohira, H
Yoshida, T
Okamoto, H
Shinagawa, S
Sakai, W
Nakajima, K
Suzuki, M
Kimura, K
Aun, NJ
Kobayashi, Y
Ohmi, S
Iwai, H
Ikenaga, E
Takata, Y
Kobayashi, K
Hattori, T
机构
[1] Musashi Inst Technol, Setagaya Ku, Tokyo 1588557, Japan
[2] Kyoto Univ, Sakyo Ku, Kyoto 6068501, Japan
[3] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 2268502, Japan
来源
JOURNAL DE PHYSIQUE IV | 2006年 / 132卷
关键词
D O I
10.1051/jp4:2006132052
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Thermal stability of Gd2O3/Si(100) interfacial transition layer was studied by analyzing the angle-resolved Si 2p and Gd 4d photoelectron spectra. Following results were obtained: The compositional depth profile of Gd2O3/Si(100) changed slightly by post deposition annealing (PDA) in nitrogen gas under atmospheric pressure below 300 degrees C. The analyses of 0 1s and Si 2p spectra indicated that the Gd-silicate consisting of Gd-O-Si bonds was produced near the Gd2O3/Si(100) interface without annealing and the amount of Gd-silicate increased by PDA above 400 degrees C.
引用
收藏
页码:273 / 277
页数:5
相关论文
共 50 条
  • [1] Interfacial layer formation during the growth of Gd2O3 on Si(001) and its thermal stability
    Gribisch, Philipp
    Fissel, Andreas
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (11)
  • [2] Interfacial layer formation in Gd2O3 films deposited directly on Si(001)
    Gupta, JA
    Landheer, D
    Sproule, GI
    McCaffrey, JP
    Graham, MJ
    Yang, KC
    Lu, ZH
    Lennard, WN
    APPLIED SURFACE SCIENCE, 2001, 173 (3-4) : 318 - 326
  • [3] Effects of substrate doping on Gd2O3(100)/Si(100) heterostructure
    Sitaputra, Wattaka
    Tsu, Raphael
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2013, 31 (02):
  • [4] Influence of Gd2O3 on thermal stability of oxyfluoride glasses
    Marta Kasprzyk
    Marcin Środa
    Magdalena Szumera
    Journal of Thermal Analysis and Calorimetry, 2017, 130 : 207 - 220
  • [5] Influence of Gd2O3 on thermal stability of oxyfluoride glasses
    Kasprzyk, Marta
    Sroda, Marcin
    Szumera, Magdalena
    JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY, 2017, 130 (01) : 207 - 220
  • [6] Electron energy loss spectroscopy of interfacial layer formation in Gd2O3 films deposited directly on Si(001)
    Botton, GA
    Gupta, JA
    Landheer, D
    McCaffrey, JP
    Sproule, GI
    Graham, MJ
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (05) : 2921 - 2928
  • [7] The thermal stability of Pt/epitaxial Gd2O3/Si stacks and its dependence on heat-treatment ambient
    Lipp, E.
    Osten, H. J.
    Eizenberg, M.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (11)
  • [8] Characterization of Gd2O3 films deposited on Si(100) by electron-beam evaporation
    Landheer, D
    Gupta, JA
    Sproule, GI
    McCaffrey, JP
    Graham, MJ
    Yang, KC
    Lu, ZH
    Lennard, WN
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (02) : G29 - G35
  • [9] A Current Modulation in the Gd2O3/Si/Gd2O3 Quantum Well Structure As a Mean to Monitor Oxygen Vacancies
    Sitaputra, Wattaka
    Hudak, John A.
    Tsu, Raphael
    7TH INTERNATIONAL CONFERENCE ON LOW DIMENSIONAL STRUCTURES AND DEVICES (LDSD 2011), 2014, 1598 : 146 - 149
  • [10] Enhancement in Electron Mobility at the Interface between Gd2O3(100) and n-type Si(100)
    Sitaputra, W.
    Tsu, R.
    SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 2, 2012, 45 (06): : 185 - 193