Pixelless infrared imaging utilizing a p-type quantum well infrared photodetector integrated with a light emitting diode

被引：43
作者：
Allard, LB
Liu, HC
Buchanan, M
Wasilewski, ZR
机构：
[1] Inst. for Microstructural Sciences, National Research Council, Ottawa
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 21期
关键词：
D O I：
10.1063/1.119058
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present experimental results which support a recently proposed scheme for infrared imaging through the combined use of a photon frequency up-conversion device with a charge coupled device (CCD) camera. The epitaxial device consists of a long wavelength p-type GaAs/AlGaAs quantum well infrared photodetector (QWIP) on top of which is grown a shorter wavelength InGaAs/GaAs light emitting diode (LED). Upon long wavelength infrared excitation of the QWIP, near infrared light is generated by the LED whose output is directed towards a commercial CCD array where the up-converted image of the long wavelength infrared source object is formed. (C) 1997 American Institute of Physics.
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页码：2784 / 2786
页数：3
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