Structure of iron silicide film on Si(111) grown by solid-phase epitaxy and reactive deposition epitaxy

被引：10

作者：

Matsumoto, M ^{[1
]}

Sugie, K ^{[1
]}

Kawauchi, T ^{[1
]}

Fukutani, K ^{[1
]}

Okano, T ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 3B期

关键词：

iron silicide; film growth; scanning tunneling microscopy (STM); low-energy electron diffraction (LEED);

D O I：

10.1143/JJAP.45.2390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The method dependence of iron silicide grown on Si(I 11) was studied by scanning tunneling microscopy. The iron silicide films grown by two different methods (solid-phase epitaxy and reactive deposition epitaxy) were compared at a small-film-thickness region below I nm. The Surface morphology strongly depends on the growth method, which suggests that the strain in the interface region is affected by the growth method.

引用

页码：2390 / 2394

页数：5

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