Characterization of palladium-related defects in silicon

被引：4

作者：

Dogra, R. ^{[1
]}

Byrne, A. P. ^{[2
,3
]}

Brett, D. A. ^{[4
]}

Ridgway, M. C. ^{[4
]}

机构：

[1] Beant Coll Engn & Technol, Gurdaspur, India

[2] Australian Natl Univ, Dept Nucl Phys, Res Sch Phys Sci & Engn, Canberra, ACT, Australia

[3] Australian Natl Univ, Fac Sci, Dept Phys, Canberra, ACT, Australia

[4] Australian Natl Univ, RSPhysSE, Dept Elect Mat Engn, Canberra, ACT, Australia

来源：

HYPERFINE INTERACTIONS | 2007年 / 177卷 / 1-3期

关键词：

Palladium; Silicon; Defects; Electric field gradient; Perturbed angular correlation;

D O I：

10.1007/s10751-008-9618-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

Using (100)Pd/(100)Rh probes, perturbed angular correlation measurements were performed to study Pd-related defects in Si as a function of dopant concentration and dopant type. Pd-vacancy and Pd-B complexes were identified by their characteristic electric field gradients in highly doped n- and p-type Si, respectively. Both pairs exhibited a T(3/2) temperature dependence of their electric field gradients.

引用

页码：33 / 37

页数：5

共 8 条

[1] ELECTRONIC-STRUCTURE OF PLATINUM IN SILICON [J].

AMMERLAAN, CAJ ;

VANOOSTEN, AB .

PHYSICA SCRIPTA, 1989, T25 :342-347

[2] Pd-vacancy complex in Si identified with the perturbed angular correlation technique [J].

Brett, DA ;

Dogra, R ;

Byrne, AP ;

Mestnik-Filho, J ;

Ridgway, MC .

PHYSICAL REVIEW B, 2005, 72 (19)

[3] Trivalent behavior of palladium in silicon [J].

Sachse, JU ;

Jost, W ;

Weber, J ;

Lemke, H .

APPLIED PHYSICS LETTERS, 1997, 71 (10) :1379-1381

[4] IN-DIFFUSION AND ANNEALING KINETICS OF PALLADIUM IN SILICON [J].

VICENTE, J ;

ENRIQUEZ, L ;

RUBIO, E ;

BAILON, L ;

BARBOLLA, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (03) :868-870

[5] ENERGY-LEVELS AND SYMMETRIES OF PALLADIUM CENTERS IN SILICON [J].

WANG, L ;

YAO, XC ;

ZHOU, J ;

QIN, GG .

PHYSICAL REVIEW B, 1988, 38 (18) :13494-13497

[6] DEEP LEVELS IN SEMICONDUCTORS [J].

WATKINS, GD .

PHYSICA B & C, 1983, 117 (MAR) :9-15

[7] SPIN RESONANCE OF PD AND PT IN SILICON [J].

WOODBURY, HH ;

LUDWIG, GW .

PHYSICAL REVIEW, 1962, 126 (02) :466-&

[8] THEORETICAL-STUDY OF THE PD-B COMPLEX IN SILICON [J].

WU, JA ;

ZHOU, J ;

ZHANG, DR .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (11) :7139-7141

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