Effect of antireflection coating on the crystallization of amorphous silicon films by flash lamp annealing

被引：1

作者：

Sonoda, Yuki ^{[1
]}

Ohdaira, Keisuke ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol, Nomi, Ishikawa 9231292, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 04期

关键词：

A-SI FILMS; THIN-FILM; SOLAR-CELLS; EXPLOSIVE CRYSTALLIZATION; GLASS; VELOCITY;

D O I：

10.7567/JJAP.56.04CS10

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We succeed in decreasing the fluence of a flash-lamp pulse required for the crystallization of electron-beam (EB)-evaporated amorphous silicon (a-Si) films using silicon nitride (SiNx) antireflection films. The antireflection effect of SiNx is confirmed not only when SiNx is placed on the surface of a-Si or flash lamp annealing (FLA) is performed from the film side, but also when SiNx is inserted between glass and a-Si and a flash pulse is supplied from the glass side. We also quantitatively confirm, by calculating flash-lamp pulse energies actually reaching a-Si films using reflectance spectra, that the reduction in the fluence of a flash-lamp pulse for the crystallization of a-Si films is due to the antireflection effect of SiNx. (C) 2017 The Japan Society of Applied Physics

引用

页数：4

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