Fabrication of GaAs/AlAs micro-pillar cavities including low-density InAs quantum dots and their photoluminescence properties

被引：1
|
作者：
Yamashita, Hiroyuki [1 ]
Kawamoto, Noriyuki [1 ]
Ogawa, Yoshihide [1 ]
Yamaguchi, Koichi [1 ]
机构：
[1] Univ Electrocommun, Dept Engn Sci, Chofu, Tokyo 1828585, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 06期
关键词：
SINGLE-PHOTON EMISSION; TEMPERATURE-DEPENDENCE; LASERS; NANOWIRE; GROWTH; NM;
D O I：
10.7567/JJAP.54.06FH03
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low-density InAs quantum dots (QDs) were grown by intermittent supply method in molecular beam epitaxy. QD density was controlled in a wide range of 10(6) to 10(9) cm(-2) by in-situ monitoring of RHEED specular-beam intensity. Low-density InAs QDs were embedded into GaAs/AlAs micropillar cavity structure, which was fabricated by anisotropic wet-etching through a conventional photoresist mask. Photoluminescence (PL) spectra of single InAs QD in the micro-cavity were analyzed, and its PL intensity was three times higher than that without the cavity. (C) 2015 The Japan Society of Applied Physics
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页数：4
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