Reconfigurable RF Power Amplifiers for Wireless Transmitters

被引：0

作者：

Bukvic, B. ^{[1
]}

Neskovic, N. ^{[1
]}

Budimir, D. ^{[2
]}

机构：

[1] Univ Belgrade, Sch Elect Engn, Belgrade 11001, Serbia

[2] Univ Westminster, Wireless Communicat Res Grp, London, England

来源：

2012 20TH TELECOMMUNICATIONS FORUM (TELFOR) | 2012年

关键词：

optical switchs; PIN diodes; reconfigurable RF power amplifiers;

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

In this paper, a reconfigurable input matching network (IMN) is used to obtain reconfigurable RF power amplifier (RPA). An Input Matching Network is realized as simple T-section, where reconfigurability is achieved by switch in shunt transmission line. An optical switch (OS) and a PIN diode are used separately, and results are presented for both cases. When an OS or a PIN diode switch is ON, RPA operates at 1.9 GHz, otherwise RPA operates at 2.2 GHz. An Output Matching Network (OMN) is realized as wideband circuit. A Cree's CGH21240 AWR Microwave Office (MWO) model of wideband transistor is used for RPAs. The S-parameters and power added efficiency (PAE) of about 50% and 35% at 1.9 GHz and 2.2 GHz, respectively, for both types of RPAs are presented.

引用

页码：373 / 375

页数：3