Influence of BaTiO3 ferroelectric orientation for electro-optic modulation on silicon

被引:67
作者
Castera, Pau [1 ]
Tulli, Domenico [2 ]
Gutierrez, Ana M. [1 ]
Sanchis, Pablo [1 ]
机构
[1] Univ Politecn Valencia, Nanophoton Technol Ctr, E-46022 Valencia, Spain
[2] DAS Photon, Valencia 46022, Spain
关键词
WAVE-GUIDE MODULATOR; STRAINED SILICON; HYBRID SILICON; DESIGN;
D O I
10.1364/OE.23.015332
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The influence of BaTiO3 ferroelectric domain orientations for high efficiency electro-optic modulation has been thoroughly analyzed. The Mach-Zehnder modulator structure is based on a CMOS compatible silicon/BaTiO3/silicon slot waveguide that supports both TE and TM polarizations whereas the Pockels effect is exploited by the application of a horizontal electric field with lateral electrodes placed on top of the BaTiO3 layer. The influence of the waveguide parameters has been optimized for each configuration and the lowest V-pi voltage combined with low losses has been determined. A V pi L as low as 0.27 V.cm has been obtained for a-axis oriented BaTiO3 and TE polarization by rotating the waveguide structure to an optimum angle. (C) 2015 Optical Society of America
引用
收藏
页码:15332 / 15342
页数:11
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