Investigation of two-dimensional electron gas concentration in selectively doped n-AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures

被引：7

作者：

Bouzaïene, L ^{[1
]}

Sfaxi, L ^{[1
]}

Maaref, H ^{[1
]}

机构：

[1] Fac Sci Monastir, Dept Phys, Lab Phys Semicond, Monastir 5000, Tunisia

来源：

MICROELECTRONICS JOURNAL | 1999年 / 30卷 / 07期

关键词：

two-dimensional electron gas; high electron mobility transistor; doping density; quantum well; heterostructures;

D O I：

10.1016/S0026-2692(99)00015-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The two-dimensional electron gas (2DEG) concentration of the delta-doped AlxGa1-xAs/InyGa1-yAs/GaAs heterojunction for a variety of different configurations are investigated. The finite differential method to determine the 2DEG concentration, based on the self-consistent calculations of the Schrodinger and Poisson equations are described. The cases where the delta-doping is placed in the AlGaAs barrier (conventional heterojunction) and in a narrow quantum well within the AlGaAs barrier where the Al concentration in the well (x(Al)(well)) is less than in the barrier (x(Al)(Barr)) (novel heterojunction) are also examined. This is intended to reduce the effects of DX centres. To improve more the 2DEG concentration, the delta Si in a narrow quantum well and the InGaAs layer introduced at the heterointerface between the AlGaAs and the GaAs are combined in only one structure. Further, other important parameters of the system such as In mole fraction and thickness of InGaAs layer are studied. The variation trends of calculated 2DEG concentrations are in good agreement with the experimental results. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：705 / 709

页数：5

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