Low-loss inverted taper edge coupler in silicon nitride

被引：9

作者：

Fernandez, Juan ^{[1
,2
]}

Banos, Rocio ^{[1
]}

Domenech, David ^{[1
]}

Dominguez, Carlos ^{[3
]}

Munoz, Pascual ^{[2
]}

机构：

[1] VLC Photon SL, C Camino Vera S-N, Valencia 46022, Spain

[2] Univ Politecn Valencia, C Camino Vera S-N, E-46022 Valencia, Spain

[3] CSIC, Inst Microelect Barcelona IMB CNM, Bellaterra 08193, Spain

来源：

IET OPTOELECTRONICS | 2019年 / 13卷 / 02期

基金：

欧盟地平线“2020”;

关键词：

WAVE-GUIDES; INTEGRATED-OPTICS; FIBER; EFFICIENCY;

D O I：

10.1049/iet-opt.2018.5065

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An inverted lateral taper with one vertical discrete step was designed for a medium confinement silicon nitride waveguide platform in the C-band, as a chip edge coupler, with a predicted insertion loss of 0.58 dB. The design is supported by an extensive study to evaluate the impact of fabrication process variations on the performance of such a coupler. The device was manufactured and measured, showing an insertion loss of 1.47 dB, which was traced back to fabrication process variations as cross-checked with simulations. To the authors' knowledge, the reported edge coupler is the shortest and among the best performing found for silicon nitride platforms.

引用

页码：62 / 66

页数：5

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