Synthesis and luminescent properties of novel red-emitting phosphor InNbO4:Eu3+ for white light emitting diodes

被引:0
|
作者
Tang, An [1 ]
Zhang, Dingfei [2 ]
Yang, Liu [3 ]
Zhang, Hongsong [1 ]
Zhang, Haoming [1 ]
Shao, Fengxiang [1 ]
Ren, Bo [1 ]
机构
[1] Henan Inst Engn, Dept Mech Engn, Zhengzhou 451191, Henan, Peoples R China
[2] Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400045, Peoples R China
[3] Chongqing Acad Sci & Technol, Chongqing 401123, Peoples R China
来源
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2014年 / 8卷 / 1-2期
关键词
Solid-state reaction; Phosphor; InNbO4; Light emitting diodes; EMISSION;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Red-emitting phosphor InNbO4:Eu3+ was synthesized by solid-state reaction. The crystal structure, particle size distribution, and luminescence properties were respectively analyzed. The XRD pattern shows that pure InNbO4:Eu3+ was obtained. The spectra reveal that the phosphor can be effectively excited under excitation with 394 nm and 466 to emit strong red light at 612 nm due to the D-5(0)-> F-7(2) transition of Eu3+. The perfect Eu3+-doped concentration is 4 mol%. The chromaticity coordinates of InNbO4:0.04Eu(3+) are closer to the National Television Standard Committee (NTSC) standard values. Thus the InNbO4:Eu3+ is a promising red-emitting phosphor for white light emitting diodes.
引用
收藏
页码:15 / 17
页数:3
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