Synthesis and luminescent properties of novel red-emitting phosphor InNbO4:Eu3+ for white light emitting diodes

被引：0

作者：

Tang, An ^{[1
]}

Zhang, Dingfei ^{[2
]}

Yang, Liu ^{[3
]}

Zhang, Hongsong ^{[1
]}

Zhang, Haoming ^{[1
]}

Shao, Fengxiang ^{[1
]}

Ren, Bo ^{[1
]}

机构：

[1] Henan Inst Engn, Dept Mech Engn, Zhengzhou 451191, Henan, Peoples R China

[2] Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400045, Peoples R China

[3] Chongqing Acad Sci & Technol, Chongqing 401123, Peoples R China

来源：

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2014年 / 8卷 / 1-2期

关键词：

Solid-state reaction; Phosphor; InNbO4; Light emitting diodes; EMISSION;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Red-emitting phosphor InNbO4:Eu3+ was synthesized by solid-state reaction. The crystal structure, particle size distribution, and luminescence properties were respectively analyzed. The XRD pattern shows that pure InNbO4:Eu3+ was obtained. The spectra reveal that the phosphor can be effectively excited under excitation with 394 nm and 466 to emit strong red light at 612 nm due to the D-5(0)-> F-7(2) transition of Eu3+. The perfect Eu3+-doped concentration is 4 mol%. The chromaticity coordinates of InNbO4:0.04Eu(3+) are closer to the National Television Standard Committee (NTSC) standard values. Thus the InNbO4:Eu3+ is a promising red-emitting phosphor for white light emitting diodes.

引用

页码：15 / 17

页数：3

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