Flexible, High-Speed CdSe Nanocrystal Integrated Circuits

被引：53

作者：

Stinner, F. Scott ^{[1
]}

Lai, Yuming ^{[1
]}

Straus, Daniel B. ^{[2
]}

Diroll, Benjamin T. ^{[2
]}

Kim, David K. ^{[3
]}

Murray, Christopher B. ^{[2
,3
]}

Kagan, Cherie R. ^{[1
,2
,3
]}

机构：

[1] Univ Penn, Dept Elect & Syst Engn, Philadelphia, PA 19104 USA

[2] Univ Penn, Dept Chem, Philadelphia, PA 19104 USA

[3] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

来源：

NANO LETTERS | 2015年 / 15卷 / 10期

基金：

美国国家科学基金会;

关键词：

CdSe; nanocrystals; flexible; integrated circuits; logic gates; ring oscillators; FIELD-EFFECT TRANSISTORS; LOW-VOLTAGE; ORGANIC TRANSISTORS; MONODISPERSE NANOCRYSTALS; COLLOIDAL NANOCRYSTALS; COMPLEMENTARY CIRCUITS; PERFORMANCE; ELECTRONICS; SOLIDS; DISPLAYS;

D O I：

10.1021/acs.nanolett.5b03363

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report large-area, flexible, high-speed analog and digital colloidal CdSe nanocrystal integrated circuits operating at low voltages. Using photolithography and a newly developed process to fabricate vertical interconnect access holes, we scale down device dimensions, reducing parasitic capacitances and increasing the frequency of circuit operation, and scale up device fabrication over 4 in. flexible substrates. We demonstrate amplifiers with similar to 7 kHz bandwidth, ring oscillators with <10 mu s stage delays, and NAND and NOR logic gates.

引用

页码：7155 / 7160

页数：6

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