Efficient Method for Estimating the Characteristics of Radiation-Induced Current Transients

被引:8
作者
Bennett, W. G. [1 ]
Schrimpf, R. D. [1 ]
Hooten, N. C. [1 ]
Reed, R. A. [1 ]
Kauppila, J. S. [1 ]
Weller, R. A. [1 ]
Warren, K. M. [1 ]
Mendenhall, M. H. [1 ]
机构
[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37212 USA
关键词
Charge collection; drift transport; efficient characterization; fast transient; Monte-Carlo radiation transport code; prompt response; single-event effects (SEE); single-event transient (SET); SINGLE-EVENT UPSET; SEU; SIMULATION; DEVICES;
D O I
10.1109/TNS.2012.2218830
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An efficient method for estimating the characteristics of ion-induced current pulse transients is presented and related to the corresponding mechanisms of single-event charge collection. The method is focused on characterizing the prompt response of a reverse biased p-n junction under relatively low level conditions (LET < 10 MeV-cm(-2)/mg). This method is shown to be accurate when compared to 3D finite element simulations, while reducing solution time such that current pulse calculations can be run in series with both energy deposition and circuit simulations.
引用
收藏
页码:2704 / 2709
页数:6
相关论文
共 13 条
[1]  
[Anonymous], 2009, TECHN COMP AID DES V
[2]  
[Anonymous], 2008, 3 DIM SIM 45 NM TECH
[3]   Basic mechanisms and modeling of single-event upset in digital microelectronics [J].
Dodd, PE ;
Massengill, LW .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (03) :583-602
[4]   3-DIMENSIONAL SIMULATION OF CHARGE COLLECTION AND MULTIPLE-BIT UPSET IN SI DEVICES [J].
DODD, PE ;
SEXTON, FW ;
WINOKUR, PS .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) :2005-2017
[5]   SEU-sensitive volumes in bulk and SOISRAMs from first-principles calculations and experiments [J].
Dodd, PE ;
Shaneyfelt, MR ;
Horn, KM ;
Walsh, DS ;
Hash, GL ;
Hill, TA ;
Draper, BL ;
Schwank, JR ;
Sexton, FW ;
Winokur, PS .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) :1893-1903
[6]   A Theoretical Analysis of Steady-State Charge Collection in Simple Diodes Under High-Injection Conditions [J].
Edmonds, Larry D. .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (02) :818-830
[7]   Electric currents through ion tracks in silicon devices [J].
Edmonds, LD .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (06) :3153-3164
[8]  
Ezaki T., 2006, INT EL DEV M 2006 IE, P1
[9]   Detailed analysis of secondary ions' effect for the calculation of neutron-induced SER in SRAMs [J].
Hubert, G ;
Palau, JM ;
Castellani-Coulié, K ;
Calvet, MC ;
Fourtine, S .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) :1953-1959
[10]   A SIMPLE ALGORITHM FOR PREDICTING PROTON SEU RATES IN-SPACE COMPARED TO THE RATES MEASURED ON THE CRRES SATELLITE [J].
REED, RA ;
MCNULTY, PJ ;
BEAUVAIS, WJ ;
ABDELKADER, WG ;
STASSINOPOULOS, EG ;
BARTH, JCL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) :2389-2395