Static and dynamic aspects of spin tunnelling in crystalline magnetic tunnel junctions

被引:38
|
作者
Tiusan, C
Sicot, M
Faure-Vincent, J
Hehn, M
Bellouard, C
Montaigne, F
Andrieu, S
Schuhl, A
机构
[1] CNRS, UMR 7556, Phys Mat Lab, F-54506 Vandoeuvre Les Nancy, France
[2] Lab SPINTEC, URA 2512, F-38054 Grenoble, France
关键词
D O I
10.1088/0953-8984/18/3/012
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Single-crystal magnetic tunnel junctions employing bee (100) Fe electrodes and MgO(100) insulating barrier are elaborated by molecular beam epitaxy. The magneto-transport properties are investigated in two extreme regimes. First, for extremely small MgO thickness, we show that the equilibrium tunnel transport in Fe/MgO/Fe systems leads to anti ferromagnetic interactions, mediated by the tunnelling of the minority spin interfacial resonance state. Second, for large MgO barrier thickness, the tunnel transport validates specific spin filtering effects in terms of symmetry of the electronic Bloch function and symmetry-dependent wavefunction attenuation in the single-crystal barrier. Within this framework, we present giant tunnel magnetoresistive effects at room temperature (125-160%). Moreover, we illustrate that the interfacial chemical and electronic Structure plays a crucial role in the spin filtering. We point out imperfect filtering effects and a strong implication of the minority surface state of Fe on the low voltage variation of tunnel magnetoresistance. The insertion of carbon impurities at the Fe/MgO interface changes radically the voltage response of the tunnel magnetoresistance and activates a resonant tunnelling mechanism via the interfacial resonance state.
引用
收藏
页码:941 / 956
页数:16
相关论文
共 50 条
  • [1] Spin-dependent tunnelling in magnetic tunnel junctions
    Tsymbal, EY
    Mryasov, ON
    LeClair, PR
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (04) : R109 - R142
  • [2] Static and dynamic spin-torque-diode sensitivity induced by the thermoelectric charge and spin currents in magnetic tunnel junctions
    Demin, Gleb D.
    Popkov, Anatoly F.
    INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2018, 2019, 11022
  • [3] Static and Dynamic Analysis of Magnetic Tunnel Junctions With Wedged MgO Barrier
    Caprile, Ambra
    Manzin, Alessandra
    Coisson, Marco
    Pasquale, Massimo
    Schumacher, Hans W.
    Liebing, Niklas
    Sievers, Sybille
    Ferreira, Ricardo
    Serrano-Guisan, Santiago
    Paz, Elvira
    IEEE TRANSACTIONS ON MAGNETICS, 2015, 51 (01)
  • [4] Manganite-based magnetic tunnel junctions:: new ideas on spin-polarised tunnelling
    de Teresa, JM
    Barthélémy, A
    Contour, JP
    Fert, A
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2000, 211 (1-3) : 160 - 166
  • [5] Temperature dependent dynamic and static magnetic response in magnetic tunnel junctions with Permalloy layers
    Sierra, J. F.
    Pryadun, V. V.
    Aliev, F. G.
    Russek, S. E.
    Garcia-Hernandez, M.
    Snoeck, E.
    Metlushko, V. V.
    APPLIED PHYSICS LETTERS, 2008, 93 (17)
  • [6] Dynamic spin-polarized resonant tunneling in magnetic tunnel junctions
    Miller, Casey W.
    Li, Zhi-Pan
    Schuller, Ivan K.
    Dave, R. W.
    Slaughter, J. M.
    AKerman, Johan
    PHYSICAL REVIEW LETTERS, 2007, 99 (04)
  • [7] Spin Current in Magnetic Tunnel Junctions
    Lee, Byung Chan
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2011, 58 (04) : 855 - 858
  • [8] Theory of spin-dependent tunnelling in magnetic junctions
    Mathon, J
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 35 (19) : 2437 - 2442
  • [9] Influence of annealing on tunnelling magnetoresistance of perpendicular magnetic tunnel junctions
    Natarajarathinam, A.
    Clark, B. D.
    Singh, A.
    Gupta, S.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (09)
  • [10] Angular dependence of tunnel magnetoresistance in magnetic tunnel junctions and specific aspects in spin-filtering devices
    Montaigne, F.
    Tiusan, C.
    Hehn, M.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (06)