Sub-Nanosecond Phase Recovery in Quantum-Dot Semiconductor Optical Amplifiers

被引:0
|
作者
Abedi, K. [1 ]
Taleb, H. [1 ]
机构
[1] Shahid Beheshti Univ, Dept Elect Engn, Fac Elect & Comp Engn, Tehran, Iran
关键词
GAIN SATURATION; MODULATION; MODEL;
D O I
10.12693/APhysPolA.123.407
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this paper, optimal design of a pumping scheme for achieving the best gain and phase response in quntum-dot semiconductor optical amplifiers is investigated. For the first time, the dynamic response of the quntum-dot semiconductor optical amplifier is evaluated under three different pumping schemes, known as optical pumping, electrical pumping, and electro-optical pumping. Simulation results show that the shortest gain recovery time in quntum-dot semiconductor optical amplifiers can be achieved under the electrical pumping scheme. However, under the optical pumping and electro-optical pumping schemes, the quntum-dot semiconductor optical amplifier represents a shorter phase recovery compared to the electrical pumping scheme. We found that a sub-nanosecond phase recovery in the quntum-dot semiconductor optical amplifier can be achieved under the OP and electro-optical pumping schemes, which can never be achieved under the electrical pumping, because of the slow carrier dynamics of the carrier reservoir. Also, it was found that the gain recovery process in an optically pumped quntum-dot semiconductor optical amplifier can be significantly accelerated at cryogenic temperatures. This result demonstrates the superiorities of the optical pumping scheme over the electrical pumping and electro-optical pumping schemes at low temperatures, where both the gain and phase recovery times of an optically pumped quantum-dot semiconductor optical amplifier are drastically decreased. DOI: 10.12693/APhysPolA.123.407
引用
收藏
页码:407 / 410
页数:4
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