Nontrivial topological electronic structures in a single Bi(111) bilayer on different substrates: A first-principles study

被引:87
|
作者
Huang, Zhi-Quan [1 ]
Chuang, Feng-Chuan [1 ]
Hsu, Chia-Hsiu [1 ]
Liu, Yu-Tzu [1 ]
Chang, Hua-Rong [1 ]
Lin, Hsin [2 ]
Bansil, Arun [2 ]
机构
[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
[2] Northeastern Univ, Dept Phys, Boston, MA 02115 USA
来源
PHYSICAL REVIEW B | 2013年 / 88卷 / 16期
关键词
SCANNING-TUNNELING-MICROSCOPY; HGTE QUANTUM-WELLS; PHASE-TRANSITION; INSULATOR; STATE; TRANSPORT; GAS;
D O I
10.1103/PhysRevB.88.165301
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electronic structures, minimum energy configurations, and band topology of strained Bi(111) single bilayers placed on a variety of semiconducting and insulating substrates are investigated using first-principles calculations. A topological phase diagram of a free-standing Bi bilayer is presented to help guide the selection of suitable substrates. The insulating hexagonal-BN is identified as the best candidate substrate material for supporting nontrivial topological insulating phase of Bi bilayer thin films. A planar hexagonal Bi layer is predicted under tensile strain, which we show could be realized on a SiC substrate. The Bi bilayer becomes metallic under the compressive strain induced by Si and Ge substrates.
引用
收藏
页数:7
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